Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ346S2 Datenblatt(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ346S2 Datenblatt(HTML) 3 Page - Siemens Semiconductor Group |
3 / 9 page Semiconductor Group 3 07/96 BUZ 346 S2 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 47 A gfs 30 42 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 2900 4300 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 1400 2100 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 500 750 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(on) - 55 80 ns Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr - 140 210 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) - 420 560 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf - 250 330 |
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