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BUZ350 Datenblatt(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ350 Datenblatt(HTML) 3 Page - Siemens Semiconductor Group |
3 / 9 page Semiconductor Group 3 07/96 BUZ 350 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 14 A gfs 9 15 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 1400 1900 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 280 400 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 130 200 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(on) - 30 45 ns Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr - 70 110 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) - 250 320 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf - 90 120 |
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