Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ80A Datenblatt(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ80A Datenblatt(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 07/96 BUZ 80A SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 80A 800 V 3 A 3 Ω TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 800 V Drain-gate voltage RGS = 20 kΩ V DGR 800 Continuous drain current TC = 50 °C ID 3 A Pulsed drain current TC = 25 °C IDpuls 12 Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 75 W Operating temperature Tj -55 ... ...+ 150 °C Storage temperature Tstg -55 ... ...+ 150 Thermal resistance, chip case RthJC ≤ 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
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Ähnliche Beschreibung - BUZ80A |
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