Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2570A Datenblatt(PDF) 3 Page - Renesas Technology Corp |
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2SC2570A Datenblatt(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. NPN SILICON RF TRANSISTOR 2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION Document No. PU10207EJ01V0DS (1st edition) (Previous No. P10404EJ3V0DS00) Date Published April 2003 CP(K) Printed in Japan The mark • • • • shows major revised points. © © © © NEC Compound Semiconductor Devices 1980, 2003 DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz • Wide dynamic range : NF = 1.9 dB TYP., Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC2570A 500 pcs (Non reel) • 18 mm wide radial taping 2SC2570A-T 2.5 kpcs/box (Box type) • Supplying paper tape with in a box Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 500 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °°°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 70 mA Total Power Dissipation Ptot Note 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air |
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