Datenblatt-Suchmaschine für elektronische Bauteile |
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AM1936NE Datenblatt(PDF) 1 Page - Analog Power |
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AM1936NE Datenblatt(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM1936NE N-Channel 30-V (D-S) MOSFET VDS (V) ID(A) 1.5 1.3 Symbol Limit Units VDS 30 VGS ±20 TA=25°C 1.5 TA=70°C 1.1 IDM 30 IS 0.6 A TA=25°C 0.3 TA=70°C 0.21 TJ, Tstg -55 to 150 °C Symbol Maximum Units 415 460 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Gate-Source Voltage PRODUCT SUMMARY 30 rDS(on) (mΩ) 90 @ VGS = 10V 130 @ VGS = 4.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM1936NE_1A |
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