Datenblatt-Suchmaschine für elektronische Bauteile |
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3N70_1109 Datenblatt(PDF) 2 Page - Unisonic Technologies |
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3N70_1109 Datenblatt(HTML) 2 Page - Unisonic Technologies |
2 / 7 page 3N70 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 7 www.unisonic.com.tw QW-R502-282,E ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Avalanche Energy Single Pulsed (Note 3) EAS 200 mJ Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 50 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 64mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤3.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 2.5 °C/W |
Ähnliche Teilenummer - 3N70_1109 |
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Ähnliche Beschreibung - 3N70_1109 |
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