Datenblatt-Suchmaschine für elektronische Bauteile |
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6N60L-TF2-T Datenblatt(PDF) 4 Page - Unisonic Technologies |
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6N60L-TF2-T Datenblatt(HTML) 4 Page - Unisonic Technologies |
4 / 6 page 6N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 6 www.unisonic.com.tw QW-R502-117.G TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDD Driver VGS RG - VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test - + Peak Diode Recovery dv/dt Test Circuit P. W. Period D= VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms |
Ähnliche Teilenummer - 6N60L-TF2-T |
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Ähnliche Beschreibung - 6N60L-TF2-T |
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