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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SMBD7000 Datenblatt(PDF) 2 Page - Siemens Semiconductor Group |
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SMBD7000 Datenblatt(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 4 page  SMBD 7000 Semiconductor Group 2 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 Oscillograph: R = 50 Ω tr = 0.6 ns, Rj = 50 Ω tr = 0.35 ns C ≤ 1pF Unit Values Parameter Symbol min. typ. max. DC characteristics nA nA µA Reverse current VR = 50 V VR = 100 V VR = 50 V, TA = 125 ˚C IR – – – – – – 300 500 100 AC characteristics ns Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω trr ––15 mV Forward voltage IF = 1 mA IF = 10 mA IF = 100 mA VF 550 670 750 – – – 700 820 1100 pF Diode capacitance VR = 0, f = 1 MHz CD ––2 V Breakdown voltage V(BR) 100 – – |
Ähnliche Teilenummer - SMBD7000 |
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Ähnliche Beschreibung - SMBD7000 |
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