Datenblatt-Suchmaschine für elektronische Bauteile |
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MC06XS3517AFK Datenblatt(PDF) 11 Page - Freescale Semiconductor, Inc |
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MC06XS3517AFK Datenblatt(HTML) 11 Page - Freescale Semiconductor, Inc |
11 / 41 page Analog Integrated Circuit Device Data Freescale Semiconductor 11 06XS3517 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS CHANNEL 4 - FOG LIGHT(6.0 m CHANNEL) Output Drain-to-Source ON Resistance (IOUT = 5.5 A, TA = 25 °C) VBAT = 13.5 V VBAT = 7.0 V RDS(ON)25 – – – – 6.0 9.0 m Output Drain-to-Source ON Resistance (IOUT = 5.5 A, VBAT = 13.5 V, TA = 150 °C) (26) RDS(ON)150 – – 10.2 m Reverse Source-to-Drain ON Resistance (IOUT = -5.5 A, TA = 25 C) (27) VBAT = -12 V RSD(ON)25 – – 12 m High Over-current Shutdown Threshold 1, VBAT = 16 V IOCHI1 96 123 150 A High Over-current Shutdown Threshold 2 IOCHI2 40 50.5 61 A Low Over-current Shutdown Threshold H7 Bulb IOCLO 17 22.5 28 A Open Load Current Threshold in ON State(28) IOL 0.15 0.62 1.5 A Open Load Current Threshold in ON State with LED(29) VOL = VBAT - 0.8 V IOLLED 4.0 10.0 20.0 mA Current Sense Full Scale Range(30) ICS FSR – 19 – A Severe Short-circuit Impedance Range(26) RSC1(OUT4) 65 – – m CHANNEL 5 - FLASHER (17 m CHANNEL) Output Drain-to-Source ON Resistance (IOUT = 2.8 A, TA = 25 °C) VBAT = 13.5 V VBAT = 7.0 V RDS(ON)25 – – – – 17 26.7 m Output Drain-to-Source ON Resistance (IOUT = 2.8 A, VBAT = 13.5 V, TA = 150 °C) (31) RDS(ON)150 – – 18.9 m Reverse Source-to-Drain ON Resistance (IOUT = -2.8A, TJ = 25C) (32) VBAT = -12V RSD(ON)25 – – 34 m High Over-current Shutdown Threshold 1, IOCHI1 48 56.2 72 A High Over-current Shutdown Threshold 2 IOCHI2 21.0 25.8 30.5 A Low Over-current Shutdown Threshold IOCLO 9.0 11.5 14 A Notes 26. Parameter guaranteed by design; however, it is not production tested. 27. Source-to-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VBAT. 28. OLLED4, bit D3 in SI data is set to [0]. 29. OLLED4, bit D3 in SI data is set to [1]. 30. For typical value of ICS FSR, ICSNS = 5.0 mA. 31. Parameter guaranteed by design; however, it is not production tested. 32. Source-to-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VBAT. Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 3.0 V V CC 5.5 V, 7.0 V VBAT 20 V, - 40 C T A 125 C, GND = 0 V, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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