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SN74ACT72211L20RJ Datenblatt(PDF) 9 Page - Texas Instruments |
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SN74ACT72211L20RJ Datenblatt(HTML) 9 Page - Texas Instruments |
9 / 21 page SN74ACT72211L, SN74ACT72221L, SN74ACT72231L, SN74ACT72241L 512 × 9, 1024 × 9, 2048 × 9, AND 4096 × 9 SYNCHRONOUS FIRST IN, FIRST OUT MEMORIES SCAS222 − FEBRUARY 1993 − REVISED JUNE 1993 9 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 RCLK tw(CLKH) No Operation tc tw(CLKL) REN1, REN2 EF WCLK tsk1 (see Note A) WEN2 WEN1 OE th(EN) tsu(EN) tpd(R-EF) tpd(R-EF) Valid Data Q0 − Q8 ta tpd(OE-Q) ten tdis NOTE A: tsk1 is the minimum time between a rising WCLK edge and a subsequent rising RCLK edge for EF to change logic levels during the current clock cycle. If the time between the rising edge of WCLK and the subsequent rising edge of RCLK is less than tsk1, then EF may not change its logic level until the next RCLK rising edge. Figure 4. Read-Cycle Timing |
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