Datenblatt-Suchmaschine für elektronische Bauteile |
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DM-232 Datenblatt(PDF) 2 Page - Sony Corporation |
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DM-232 Datenblatt(HTML) 2 Page - Sony Corporation |
2 / 5 page —2— DM-232 Equivalent Circuit 1 VCC RD RA RB RC 2 3 4 GND V B VA Basic Performance 1) Operation principle ∗ Device internal structure (Back of mark face) Bias magnetic field H=14400A/m RA RD 1 2 3 4 RB RC External magnetic field H Synthetic magnetic field (b) External magnetic field H Synthetic magnetic field (a) Bias magnetic field 1 2 3 4 2) Power supply pin and output pin 3) Sensitivity direction 232 1 3 2 4 1 VCC Out put Differential amplifier GND 2 4 3 Sensitive Non-Sensitive Various resistances change according to the direction of the combnied bias and external magnetic field. ¡) When the direction of the synthetic magnetic field is (a), RA,RC : Minimum resistance RB,RD : Maximum resistance ¡¡) When the direction of the synthetic magnetic field is (b), RA,RC : Maximum resistance RB,RD : Minimum resistance The ferromagnetic magnetoresistance element differs from the semiconductor magnetoresistance element and hole element in that it responds only to the magnetic field within the element's surface. It is not sensitive to the magnetic field perpendicular to the element. |
Ähnliche Teilenummer - DM-232 |
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Ähnliche Beschreibung - DM-232 |
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