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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FDD26AN06A0 Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FDD26AN06A0 Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
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4 / 8 page  ©2011 Fairchild Semiconductor Corporation FDD26AN06A0_F085 Rev. C1 Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics Figure 9. Drain to Source On Resistance vs Drain Current Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature Typical Characteristics T C = 25°C unless otherwise noted 0.1 1 10 100 1000 110 100 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = MAX RATED TC = 25 oC SINGLE PULSE LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS 10 µs 1ms DC 100 µs 10ms 1 10 100 0.01 0.1 1 300 10 tAV, TIME IN AVALANCHE (ms) STARTING TJ = 25 oC STARTING TJ = 150 oC tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 0 20 40 60 80 100 34 567 89 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = 25 oC TJ = -55 oC 0 20 40 60 80 100 01234 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 5V VGS = 20V VGS = 7V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC VGS = 10V VGS = 6V 18.0 18.5 19.0 19.5 20.0 0 10203040 ID, DRAIN CURRENT (A) VGS = 10V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 2.0 2.5 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 36A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX |
Ähnliche Teilenummer - FDD26AN06A0_11 |
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Ähnliche Beschreibung - FDD26AN06A0_11 |
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