Datenblatt-Suchmaschine für elektronische Bauteile |
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FGB40N60SM Datenblatt(PDF) 7 Page - Fairchild Semiconductor |
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FGB40N60SM Datenblatt(HTML) 7 Page - Fairchild Semiconductor |
7 / 9 page 7 www.fairchildsemi.com FGB40N60SM Rev. A Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current Vs. Frequency Figure 21.Transient Thermal Impedance of IGBT 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 Common Emitter VGE = 15V Collector-EmitterCase Temperature, TC [ o C] 1k 10k 100k 1M 0 10 20 30 40 50 60 70 80 90 100 110 120 Tc = 75 oC Square Wave TJ < 175 o C, D = 0.5, VCE = 400V VGE = 15/0V,RG = 6Ω Ω Ω Ω Switching Frequency, f [Hz] Tc = 100 oC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.001 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse Rectangular Pulse Duration [sec] Duty Factor, D = t1/t2 Peak T j = Pdm x Zthjc + TC 0.5 |
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Ähnliche Beschreibung - FGB40N60SM |
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