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2SJ652 Datenblatt(PDF) 2 Page - Sanyo Semicon Device |
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2SJ652 Datenblatt(HTML) 2 Page - Sanyo Semicon Device |
2 / 7 page 2SJ652 No.7625-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --60 V Zero-Gate Voltage Drain Current IDSS VDS=--60V, VGS=0V --1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=--14A 18 26 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--14A, VGS=--10V 28.5 38 mΩ RDS(on)2 ID=--14A, VGS=--4V 39 55.5 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 4360 pF Output Capacitance Coss 470 pF Reverse Transfer Capacitance Crss 335 pF Turn-ON Delay Time td(on) See Fig.2 33 ns Rise Time tr 210 ns Turn-OFF Delay Time td(off) 310 ns Fall Time tf 180 ns Total Gate Charge Qg VDS=--30V, VGS=--10V, ID=--28A 80 nC Gate-to-Source Charge Qgs 15 nC Gate-to-Drain “Miller” Charge Qgd 12 nC Diode Forward Voltage VSD IS=--28A, VGS=0V --0.96 --1.2 V Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SJ652-1E TO-220F-3SG 50pcs./magazine Pb Free ≥50Ω 50Ω RG 0V --10V VDD L 2SJ652 D.C.≤1% PW=10μs P.G 50Ω G S D ID= --14A RL=2.1Ω VDD= --30V VOUT 2SJ652 VIN 0V --10V VIN |
Ähnliche Teilenummer - 2SJ652_12 |
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Ähnliche Beschreibung - 2SJ652_12 |
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