Datenblatt-Suchmaschine für elektronische Bauteile |
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STK760-216-E Datenblatt(PDF) 3 Page - Sanyo Semicon Device |
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STK760-216-E Datenblatt(HTML) 3 Page - Sanyo Semicon Device |
3 / 11 page STK760-216-E No.A1793-3/11 Electrical Characteristics at Tc = 25 °C, VCC = 15.0V: Unless otherwise noted Ratings Parameter Symbol Conditions Test circuit min typ max unit Power output part Collector-emitter leak current (IGBT) ICES VCE = 600V Fig.1 200 μA Collector-emitter saturation voltage (IGBT) VCE(sat) IC = 50A Fig.2 1.2 1.8 V Diode reverse current (FRD1) IR VR = 600V Fig.1 200 μA Diode forward voltage (FRD1) VF1 IF = 50A Fig.3 1.8 2.4 V Diode forward voltage (FRD2) VF2 IF = 5A Fig.3 2.5 3.5 V θj-c1 IGBT (TR1+TR2) 0.56 °C/W θj-c2 FRD1 (D2+D3) 0.83 °C/W Junction to case thermal resistance θj-c3 FRD2 (D4) 9.0 °C/W Control IC part ICC(ON) VCC = 15V, VONF = 5V 14 20 Control IC input current ICC(OFF) VCC = 15V, VONF = 0V 2.5 5 mA Oscillation frequency fOSC 19.5 22.0 24.5 kHz Open loop protection threshold voltage VOLP Fig.4 0.8 0.95 1.1 V Error-amp reference voltage Vref 4.88 5.0 5.12 V Peak current protection threshold voltage VIS(PK) Fig.5 -0.58 -0.5 -0.42 V Over voltage protection threshold voltage VOVP(ON) 5.095 5.3 5.51 V Brown-out protection threshold voltage VBOP(ON) 0.66 0.76 0.86 V Brown-out protection enable voltage VBOP(EN) VCC = 15V, VONF = 5V Fig.6 1.46 1.56 1.66 V VTHON 3.0 V ON/OFF threshold voltage VTHOFF VCC = 15V Fig.7 0.5 V Start-up VCC voltage VCC(ON) 12.4 13.25 14.1 V Shut-down VCC voltage VCC(OFF) VONF = 5V Fig.8 9.4 10.0 10.7 V Substrate temperature monitor resistance RTH Resistance between VTH1-VTH2 Fig.3 90 100 110 k Ω Application circuit : VAC = 200V, VO = 380V (Vctl = 1.507V) Output voltage VO Wo = 2kW 366 380 394 V Wo = 400W 0.98 0.99 Power Factor cos φ Wo = 2kW Fig.9 0.99 0.995 1.0 |
Ähnliche Teilenummer - STK760-216-E |
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Ähnliche Beschreibung - STK760-216-E |
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