Datenblatt-Suchmaschine für elektronische Bauteile |
|
ST3400S23RG_V2 Datenblatt(PDF) 3 Page - List of Unclassifed Manufacturers |
|
ST3400S23RG_V2 Datenblatt(HTML) 3 Page - List of Unclassifed Manufacturers |
3 / 6 page ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3400S23RG 2006. V1 3 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.4 1.0 V Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V 1 uA VDS=24V,VGS=0V TJ=55℃ 10 Drain-source On-Resistance RDS(on) VGS=10V,ID=5.8A VGS=4.5V,ID=4.8A VGS=2.5V,ID=4.0A 28 33 40 mΩ Forward Transconductance gfs VDS=4.5V,ID=5.8A 12 S Diode Forward Voltage VSD IS=1.7A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Qg VDS=15V VGS=10V ID≡6.7A 9.7 18 nC Gate-Source Charge Qgs 1.6 Gate-Drain Charge Qgd 3.1 Input Capacitance Ciss VDS=15V VGS=0V F=1MHz 450 pF Output Capacitance Coss 240 Reverse Transfer Capacitance Crss 38 Turn-On Time td(on) tr VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 7 15 nS 10 20 Turn-Off Time td(off) tf 20 40 11 20 |
Ähnliche Teilenummer - ST3400S23RG_V2 |
|
Ähnliche Beschreibung - ST3400S23RG_V2 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |