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AD8012AR Datenblatt(PDF) 4 Page - Analog Devices |
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AD8012AR Datenblatt(HTML) 4 Page - Analog Devices |
4 / 15 page AD8012 –4– REV. A ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Internal Power Dissipation2 Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.8 W microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 0.6 W Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . ±V S Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range RM, R . . . . . . –65 °C to +125°C Operating Temperature Range (A Grade) . . –40 °C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . +300 °C NOTES 1Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2Specification is for device in free air at +25 °C 8-Lead SOIC Package: θ JA = 155 °C/W 8-Lead microSOIC Package: θ JA = 200 °C/W MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the AD8012 is limited by the associated rise in junction temperature. The maxi- mum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately +150 °C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175 °C for an extended period can result in de- vice failure. The output stage of the AD8012 is designed for maximum load current capability. As a result, shorting the output to common can cause the AD8012 to source or sink 500 mA. To ensure proper operation, it is necessary to observe the maximum power derating curves. Direct connection of the output to either power supply rail can destroy the device. AMBIENT TEMPERATURE – C –50 0 TJ = +150 C 2.0 1.5 1.0 8-LEAD SOIC PACKAGE –40 –30 0 102030 40 5060 70 80 90 8-LEAD microSOIC 0.5 –20 –10 Figure 3. Plot of Maximum Power Dissipation vs. Temperature for AD8012 CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8012 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE ORDERING GUIDE Temperature Package Package Brand Model Range Description Options Code AD8012AR –40 °C to +85°C 8-Lead SOIC SO-8 AD8012AR-REEL –40 °C to +85°C13” Tape and Reel SO-8 AD8012AR-REEL7 –40 °C to +85°C7” Tape and Reel SO-8 AD8012ARM –40 °C to +85°C 8-Lead microSOIC RM-08 H6A AD8012ARM-REEL –40 °C to +85°C13” Tape and Reel RM-08 H6A AD8012ARM-REEL7 –40 °C to +85°C7” Tape and Reel RM-08 H6A |
Ähnliche Teilenummer - AD8012AR |
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Ähnliche Beschreibung - AD8012AR |
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