Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB09N04H8 Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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MTB09N04H8 Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
1 / 10 page CYStech Electronics Corp. Spec. No. : C892H8 Issued Date : 2013.02.01 Revised Date : Page No. : 1/10 MTB09N04H8 CYStek Product Specification N-Channel Logic Level Enhancement Mode Power MOSFET MTB09N04H8 BVDSS 40V ID 60A VGS=10V, ID=10A 6mΩ RDSON(TYP) VGS=4.5V, ID=8A 10mΩ Description The MTB09N04H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol Outline MTB09N04H8 EDFN5×6 Pin 1 G:Gate D:Drain S:Source |
Ähnliche Teilenummer - MTB09N04H8 |
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Ähnliche Beschreibung - MTB09N04H8 |
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