MMSF3300 datasheet(4/12 Pages) MOTOROLA

Teilenummer	MMSF3300

Bauteilbeschribung	SINGLE TMOS POWER MOSFET 30 VOLTS

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Hersteller	MOTOROLA [Motorola, Inc]

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MMSF3300

4

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

4

8

10

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

2.0

2.5

4.0

0

4

8

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

23

4

10

0

0.20

0.30

02

4

6

8

16

0.016

0.018

0.020

0.008

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1.5

2.0

510

15

30

1

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

TJ = 125°C

25

°C

–55

°C

TJ = 25°C

VGS = 0 V

ID = 5.0 A

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

ID = 10 A

3.0

3.5

56

78

9

10

10 V

– 50

– 25

0

25

50

75

100

125

150

TJ = 125°C

1.0

10

20

25

100

°C

0

0.25

0.50

1.25

0.75

1.00

1.50

1.75

2.00

2

TJ = 25°C

1

6

2

6

10

0.10

0.002

0.004

0.006

0

0.5

0

0.1

3

7

5

9

3

7

1

5

9

0.15

0.25

0.05

0.014

0.010

0.012

12

6.0 V

4.5 V

4.1 V

3.7 V

3.3 V

3.1 V

2.9 V

25

°C

VGS = 2.7 V

10 V

3.5 V

14

Ähnliche Beschreibung - MMSF3300

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