Datenblatt-Suchmaschine für elektronische Bauteile |
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MMSF5P02HD Datenblatt(PDF) 4 Page - Motorola, Inc |
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MMSF5P02HD Datenblatt(HTML) 4 Page - Motorola, Inc |
4 / 12 page MMSF5P02HD 4 Motorola TMOS Power MOSFET Transistor Device Data TYPICAL ELECTRICAL CHARACTERISTICS VGS= 8 Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current and Gate Voltage Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current versus Voltage 2.0 0 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 12 8.0 10 6.0 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 3.0 1.0 4.0 2.0 0 0 VGS, GATE–TO–SOURCE (VOLTS) 0.06 0.04 0.02 0 ID, DRAIN CURRENT (AMPS) 2.0 0 0.04 0.02 0 4.0 –25 25 –50 TJ, JUNCTION TEMPERATURE (°C) 2.0 1.5 1.0 0.5 0 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 4.0 0 1000 100 10 1.0 16 0 0 0.5 1.0 1.5 2.5 1.5 2.0 6.0 12 2.0 4.0 6.0 8.0 10 6.0 8.0 50 100 75 8.0 12 20 125 150 TJ = 25°C VGS = 4.5 V 2.5 V VGS = 4.5 V ID = 5.1 A 25 °C 100 °C TJ = 125°C VGS = 0 V ID = 6.4 A TJ = 25°C TJ = –55°C 100 °C 25 °C VDS ≥ 10 V 1.7 V 1.9 V 2.1 V 2.3 V TJ = 25°C 2.5 V 2.7 V 3.1 V 4.5 V 3.7 V 0.06 10 12 8.0 10 4.0 2.0 |
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