Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE8810B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE8810B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE8810B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection VER 1.2 1 Description The ACE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features V DS(V)=20 I D=7A (VGS=4.5V) R DS(ON)<21Ω (VGS=4.5V) R DS(ON)<25Ω (VGS=2.5V) R DS(ON)<33Ω (VGS=1.8V) ESD Protected: 2,000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current (Continuous) *AC TA=25 OC ID 7 A TA=70 OC 5.6 Drain Current (Pulse) *B IDM 30 Power Dissipation (1) TA=25 OC PD 1.5 W TA=70 OC 1 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type TSSOP-8 |
Ähnliche Teilenummer - ACE8810B |
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Ähnliche Beschreibung - ACE8810B |
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