Datenblatt-Suchmaschine für elektronische Bauteile |
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BCP56 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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BCP56 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page V 1 IC = 500 m A, VCE = 2 V Base-Emitter On Voltage VBE(on) V 0.5 IC = 500 m A, IB = 50 mA Collector-Emitter Saturation Voltage VCE(sat) - 250 25 40 25 IC = 5 mA, VCE = 2V IC = 150 mA, VCE = 2V IC = 500mA, VCE = 2 V DC Current Gain hFE ON CHARACTERISTICS* µA 10 VEB = 5V Emitter Cutoff Current IEBO nA uA 100 10 VCB = 30 V VCB = 30 V, Tj= +125°C Collector Cutoff Current ICBO V 5 IE = 10 µA Emitter-Base Breakdown Voltage BVEBO V 100 IC = 100 µA Collector-Base Breakdown Voltage BVCBO V 80 IC = 10 mA Collector-Emitter Breakdown Voltage BVCEO OFF CHARACTERISTICS Units Max Min Test Conditions Parameter Symbol NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Pr3947_REV A |
Ähnliche Teilenummer - BCP56 |
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Ähnliche Beschreibung - BCP56 |
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