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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FDD16AN08A0 Datenblatt(PDF) 5 Page - Fairchild Semiconductor |
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FDD16AN08A0 Datenblatt(HTML) 5 Page - Fairchild Semiconductor |
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5 / 11 page  ©2002 Fairchild Semiconductor Corporation FDD16AN08A0 Rev. A1 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge Waveforms for Constant Gate Current Typical Characteristics T C = 25°C unless otherwise noted VGS = VDS, ID = 250µA TJ, JUNCTION TEMPERATURE ( oC) 0.4 0.6 0.8 1.0 1.2 1.4 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 0.9 1.0 1.1 -80 -40 0 40 80 120 160 200 1.2 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 100 1000 0.1 1 10 5000 75 50 0 2 4 6 8 10 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) VDD = 40V ID = 50A ID = 10A WAVEFORMS IN DESCENDING ORDER: |
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Ähnliche Beschreibung - FDD16AN08A0 |
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