Datenblatt-Suchmaschine für elektronische Bauteile |
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FDD6030 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDD6030 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page FDD6030BL Rev. A FDD6030BL N-Channel PowerTrenchTM MOSFET Features • 35 A, 30 V. R DS(ON) = 0.018 Ω @ VGS = 10 V R DS(ON) = 0.025 Ω @ VGS = 4.5 V. • Low gate charge. • Fast switching speed. • High performance trench technology for extremely low R DS(ON). ©1999 Fairchild Semiconductor Corporation April 1999 ADVANCE INFORMATION Absolute Maximum Ratings TC=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current -Continuous (Note 1) 35 (Note 1a) 9 Maximum Drain Current -Pulsed 100 A Maximum Power Dissipation @ TC = 25 oC (Note 1) 44 TA = 25 oC (Note 1a) 2.8 PD TA = 25 oC (Note 1b) 1.3 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to- Case (Note 1) 2.8 °C/W RθJA Thermal Resistance, Junction-to- Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6030BL FDD6030BL 13’’ 16mm 2500 General Description This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Motor drives G S D TO-252 S D G |
Ähnliche Teilenummer - FDD6030 |
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Ähnliche Beschreibung - FDD6030 |
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