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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FDT3612 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDT3612 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  March 2001 2001 Fairchild Semiconductor Corporation FDT3612 Rev. C1 (W) FDT3612 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Applications • DC/DC converter • Motor driving Features • 3.7 A, 100 V. R DS(ON) = 120 m Ω @ V GS = 10 V RDS(ON) = 130 m Ω @ V GS = 6 V • Fast switching speed • Low gate charge (14nC typ) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package G D S D SOT-223 S G D D G D S SOT-223* (J23Z) S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 3.7 A – Pulsed 20 Maximum Power Dissipation (Note 1a) 3.0 (Note 1b) 1.3 PD (Note 1c) 1.1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3612 FDT3612 13’’ 12mm 2500 units |
Ähnliche Teilenummer - FDT3612 |
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Ähnliche Beschreibung - FDT3612 |
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