FGB20N6S2 datasheet(2/8 Pages) FAIRCHILD

Teilenummer	FGB20N6S2

Bauteilbeschribung	600V, SMPS II Series N-Channel IGBT

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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2 / 8 page

FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2

Package Marking and Ordering Information

Electrical Characteristics T

J = 25°C unless otherwise noted

Off State Characteristics

On State Characteristics

Dynamic Characteristics

Switching Characteristics

Thermal Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

20N6S2

FGH20N6S2

TO-247

Tube

N/A

30 Units

20N6S2

FGP20N6S2

TO-220AB

Tube

N/A

50 Units

20N6S2

FGB20N6S2

TO-263AB

Tube

N/A

50 Units

20N6S2

FGB20N6S2T

TO-263AB

330mm

24mm

800 Units

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVCES

Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0

600

-

V

BVECS

Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0

20

-

V

ICES

Collector to Emitter Leakage Current

VCE = 600V

TJ = 25°C

-

250

µA

TJ = 125°C-

-

2.0

mA

IGES

Gate to Emitter Leakage Current

VGE = ± 20V

-

±250

nA

VCE(SAT)

Collector to Emitter Saturation Voltage IC = 7.0A,

VGE = 15V

TJ = 25°C-

2.2

2.7

V

TJ = 125°C-

1.9

2.2

V

QG(ON)

Gate Charge

IC = 7.0A,

VCE = 300V

VGE = 15V

-

30

36

nC

VGE = 20V

-

38

45

nC

VGE(TH)

Gate to Emitter Threshold Voltage

IC = 250µA, VCE = 600V

3.5

4.3

5.0

V

VGEP

Gate to Emitter Plateau Voltage

IC = 7.0A, VCE = 300V

-

6.5

8.0

V

SSOA

Switching SOA

TJ = 150°C, RG = 25Ω, VGE =

15V , L = 0.5mH, Vce = 600V

35

-

A

td(ON)I

Current Turn-On Delay Time

IGBT and Diode at TJ = 25°C,

ICE = 7A,

VCE = 390V,

VGE = 15V,

RG = 25Ω

L = 0.5mH

Test Circuit - Figure 20

-7.7

-

ns

trI

Current Rise Time

-

4.5

-

ns

td(OFF)I

Current Turn-Off Delay Time

-

87

-

ns

tfI

Current Fall Time

-

50

-

ns

EON1

Turn-On Energy (Note 1)

-

25

-

µJ

EON2

Turn-On Energy (Note 1)

-

85

-

µJ

EOFF

Turn-Off Energy (Note 2)

-

58

75

µJ

td(ON)I

Current Turn-On Delay Time

IGBT and Diode at TJ = 125°C,

ICE = 7A,

VCE = 390V,

VGE = 15V,

RG = 25Ω

L = 0.5mH

Test Circuit - Figure 20

-7

-

ns

trI

Current Rise Time

-

4.5

-

ns

td(OFF)I

Current Turn-Off Delay Time

-

120

145

ns

tfI

Current Fall Time

-

85

105

ns

EON1

Turn-On Energy (Note 1)

-

20

-

µJ

EON2

Turn-On Energy (Note 1)

-

125

140

µJ

EOFF

Turn-Off Energy (Note 2)

-

135

180

µJ

RθJC

Thermal Resistance Junction-Case

-

1.0

°C/W

NOTE:

1.

Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss

of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ

as the IGBT. The diode type is specified in figure 20.

2.

Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of

the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per

JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-

es the true total Turn-Off Energy Loss.

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