Datenblatt-Suchmaschine für elektronische Bauteile |
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FGB30N6S2 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FGB30N6S2 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1 Package Marking and Ordering Information Electrical Characteristics T J = 25°C unless otherwise noted Off State Characteristics On State Characteristics Dynamic Characteristics Switching Characteristics Thermal Characteristics Device Marking Device Package Reel Size Tape Width Quantity 30N6S2 FGH30N6S2 TO-247 Tube N/A 30 Units 30N6S2 FGP30N6S2 TO-220AB Tube N/A 50 Units 30N6S2 FGB30N6S2 TO-263AB Tube N/A 50 Units 30N6S2 FGB30N6S2T TO-263AB 330mm 24mm 800 Units Symbol Parameter Test Conditions Min Typ Max Units BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V BVECS Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 20 - - V ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 100 µA TJ = 125°C- - 2 mA IGES Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA VCE(SAT) Collector to Emitter Saturation Voltage IC = 12A, VGE = 15V TJ = 25°C- 2.0 2.5 V TJ = 125°C- 1.7 2.0 V QG(ON) Gate Charge IC = 12A, VCE = 300V VGE = 15V - 23 29 nC VGE = 20V - 26 33 nC VGE(TH) Gate to Emitter Threshold Voltage IC = 250µA, VCE = 600V 3.5 4.3 5.0 V VGEP Gate to Emitter Plateau Voltage IC = 12A, VCE = 300V - 6.5 8.0 V SSOA Switching SOA TJ = 150°C, RG = 10Ω, VGE = 15V, L = 100 µH, V CE = 600V 60 - - A td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 25°C, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10Ω L = 200 µH Test Circuit - Figure 20 -6 - ns trI Current Rise Time - 10 - ns td(OFF)I Current Turn-Off Delay Time - 40 - ns tfI Current Fall Time - 53 - ns EON1 Turn-On Energy (Note 2) - 55 - µJ EON2 Turn-On Energy (Note 2) - 110 - µJ EOFF Turn-Off Energy (Note 3) - 100 150 µJ td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 125°C ICE = 12A, VCE = 390V, VGE = 15V, RG = 10Ω L = 200 µH Test Circuit - Figure 20 -11 - ns trI Current Rise Time - 17 - ns td(OFF)I Current Turn-Off Delay Time - 73 100 ns tfI Current Fall Time - 90 100 ns EON1 Turn-On Energy (Note 2) - 55 - µJ EON2 Turn-On Energy (Note 2) - 160 200 µJ EOFF Turn-Off Energy (Note 3) - 250 350 µJ RθJC Thermal Resistance Junction-Case - - 0.75 °C/W NOTE: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 20. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc- es the true total Turn-Off Energy Loss. |
Ähnliche Teilenummer - FGB30N6S2 |
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Ähnliche Beschreibung - FGB30N6S2 |
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