Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

FGB30N6S2 Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FGB30N6S2
Bauteilbeschribung  600V, SMPS II Series N-Channel IGBT
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGB30N6S2 Datenblatt(HTML) 2 Page - Fairchild Semiconductor

  FGB30N6S2 Datasheet HTML 1Page - Fairchild Semiconductor FGB30N6S2 Datasheet HTML 2Page - Fairchild Semiconductor FGB30N6S2 Datasheet HTML 3Page - Fairchild Semiconductor FGB30N6S2 Datasheet HTML 4Page - Fairchild Semiconductor FGB30N6S2 Datasheet HTML 5Page - Fairchild Semiconductor FGB30N6S2 Datasheet HTML 6Page - Fairchild Semiconductor FGB30N6S2 Datasheet HTML 7Page - Fairchild Semiconductor FGB30N6S2 Datasheet HTML 8Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics T
J = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
30N6S2
FGH30N6S2
TO-247
Tube
N/A
30 Units
30N6S2
FGP30N6S2
TO-220AB
Tube
N/A
50 Units
30N6S2
FGB30N6S2
TO-263AB
Tube
N/A
50 Units
30N6S2
FGB30N6S2T
TO-263AB
330mm
24mm
800 Units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVCES
Collector to Emitter Breakdown Voltage
IC = 250µA, VGE = 0
600
-
-
V
BVECS
Emitter to Collector Breakdown Voltage
IC = -10mA, VGE = 0
20
-
-
V
ICES
Collector to Emitter Leakage Current
VCE = 600V
TJ = 25°C
-
-
100
µA
TJ = 125°C-
-
2
mA
IGES
Gate to Emitter Leakage Current
VGE = ± 20V
-
-
±250
nA
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 12A,
VGE = 15V
TJ = 25°C-
2.0
2.5
V
TJ = 125°C-
1.7
2.0
V
QG(ON)
Gate Charge
IC = 12A,
VCE = 300V
VGE = 15V
-
23
29
nC
VGE = 20V
-
26
33
nC
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 250µA, VCE = 600V
3.5
4.3
5.0
V
VGEP
Gate to Emitter Plateau Voltage
IC = 12A, VCE = 300V
-
6.5
8.0
V
SSOA
Switching SOA
TJ = 150°C, RG = 10Ω, VGE =
15V, L = 100
µH, V
CE = 600V
60
-
-
A
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 25°C,
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω
L = 200
µH
Test Circuit - Figure 20
-6
-
ns
trI
Current Rise Time
-
10
-
ns
td(OFF)I
Current Turn-Off Delay Time
-
40
-
ns
tfI
Current Fall Time
-
53
-
ns
EON1
Turn-On Energy (Note 2)
-
55
-
µJ
EON2
Turn-On Energy (Note 2)
-
110
-
µJ
EOFF
Turn-Off Energy (Note 3)
-
100
150
µJ
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 125°C
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω
L = 200
µH
Test Circuit - Figure 20
-11
-
ns
trI
Current Rise Time
-
17
-
ns
td(OFF)I
Current Turn-Off Delay Time
-
73
100
ns
tfI
Current Fall Time
-
90
100
ns
EON1
Turn-On Energy (Note 2)
-
55
-
µJ
EON2
Turn-On Energy (Note 2)
-
160
200
µJ
EOFF
Turn-Off Energy (Note 3)
-
250
350
µJ
RθJC
Thermal Resistance Junction-Case
-
-
0.75
°C/W
NOTE:
2.
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss
of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ
as the IGBT. The diode type is specified in figure 20.
3.
Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.


Ähnliche Teilenummer - FGB30N6S2

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Fairchild Semiconductor
FGB30N6S2 FAIRCHILD-FGB30N6S2 Datasheet
259Kb / 11P
   600V, SMPS II Series N-Channel IGBT
FGB30N6S2 FAIRCHILD-FGB30N6S2 Datasheet
179Kb / 8P
   600V, SMPS II Series N-Channel IGBT
FGB30N6S2D FAIRCHILD-FGB30N6S2D Datasheet
281Kb / 12P
   600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB30N6S2D FAIRCHILD-FGB30N6S2D Datasheet
287Kb / 12P
   600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB30N6S2DT FAIRCHILD-FGB30N6S2DT Datasheet
287Kb / 12P
   600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
More results

Ähnliche Beschreibung - FGB30N6S2

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Fairchild Semiconductor
FGH50N6S2 FAIRCHILD-FGH50N6S2 Datasheet
173Kb / 8P
   600V, SMPS II Series N-Channel IGBT
FGH30N6S2 FAIRCHILD-FGH30N6S2_01 Datasheet
259Kb / 11P
   600V, SMPS II Series N-Channel IGBT
FGB30N6S2T FAIRCHILD-FGB30N6S2T Datasheet
179Kb / 8P
   600V, SMPS II Series N-Channel IGBT
FGH20N6S2 FAIRCHILD-FGH20N6S2 Datasheet
183Kb / 8P
   600V, SMPS II Series N-Channel IGBT
FGH40N6S2 FAIRCHILD-FGH40N6S2 Datasheet
176Kb / 8P
   600V, SMPS II Series N-Channel IGBT
FGH60N6S2 FAIRCHILD-FGH60N6S2 Datasheet
175Kb / 8P
   600V, SMPS II Series N-Channel IGBT
logo
Intersil Corporation
HGTD7N60A4S INTERSIL-HGTD7N60A4S Datasheet
168Kb / 11P
   600V, SMPS Series N-Channel IGBT
June 2000
logo
Fairchild Semiconductor
HGT1S7N60A4S9A FAIRCHILD-HGT1S7N60A4S9A Datasheet
204Kb / 8P
   600V, SMPS Series N-Channel IGBT
HGTD3N60A4S FAIRCHILD-HGTD3N60A4S Datasheet
189Kb / 8P
   600V, SMPS Series N-Channel IGBT
HGTG40N60A4 FAIRCHILD-HGTG40N60A4 Datasheet
181Kb / 8P
   600V, SMPS Series N-Channel IGBT
More results


Html Pages

1 2 3 4 5 6 7 8


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com