 Semiconductor Components Industries, LLC, 2011

November, 2011 − Rev. 9

1

Publication Order Number:

PZTA42T1/D

PZTA42T1G,

SPZTA42T1G

High Voltage Transistor

Surface Mount

NPN Silicon

Features

Site and Control Change Requirements

Compliant*

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

(Open Base)

300

Vdc

Collector-Base Voltage

(Open Emitter)

300

Vdc

Emitter-Base Voltage

(Open Collector)

6.0

Vdc

Collector Current (DC)

500

mAdc

Total Power Dissipation

1.5

W

Storage Temperature Range

−65 to 150

C

Junction Temperature

150

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient (Note 1)

83.3

C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board

1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOT−223

CASE 318E

STYLE 1

MARKING DIAGRAM

COLLECTOR 2, 4

BASE

1

EMITTER 3

SOT−223 PACKAGE

NPN SILICON

HIGH VOLTAGE TRANSISTOR

SURFACE MOUNT

1

AYW

P1D G

G

P1D

= Specific Device Code

A

= Assembly Location

Y

= Year

W

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

Package

ORDERING INFORMATION

PZTA42T1G

SOT−223

(Pb−Free)

1,000 / Tape & Reel

SPZTA42T1G

SOT−223

(Pb−Free)

1,000 / Tape & Reel