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74AHCT1G32GW Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer 74AHCT1G32GW
Bauteilbeschribung  2-input OR gate
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74AHCT1G32GW Datenblatt(HTML) 6 Page - NXP Semiconductors

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74AHC_AHCT1G32_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 14 May 2009
6 of 12
NXP Semiconductors
74AHC1G32; 74AHCT1G32
2-input OR gate
[1]
tpd is the same as tPLH and tPHL.
[2]
Typical values are measured at VCC = 3.3 V.
[3]
Typical values are measured at VCC = 5.0 V.
[4]
CPD is used to determine the dynamic power dissipation PD (µW).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
12. Waveforms
For type 74AHCT1G32
tpd
propagation
delay
A and B to Y;
see Figure 5;
VCC = 4.5 V to 5.5 V
[1]
[3]
CL = 15 pF
-
3.3
6.9
1.0
8.0
1.0
9.0
ns
CL = 50 pF
-
4.8
7.9
1.0
9.0
1.0
10
ns
CPD
power
dissipation
capacitance
per buffer;
CL =50pF;f=1 MHz;
VI = GND to VCC
[4] -17
-
-
-
-
-
pF
Table 8.
Dynamic characteristics …continued
GND = 0 V; tr = tf = ≤ 3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.
Symbol Parameter
Conditions
25
°C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
Measurement points are given in Table 9.
Fig 5.
The input (A and B) to output (Y) propagation delays
mna167
A, B input
Y output
tPHL
tPLH
VM
VM
Table 9.
Measurement points
Type number
Input
Output
VI
VM
VM
74AHC1G32
GND to VCC
0.5
× VCC
0.5
× VCC
74AHCT1G32
GND to 3.0 V
1.5 V
0.5
× V
CC


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