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74AHCT1G32GW Datenblatt(PDF) 6 Page - NXP Semiconductors |
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74AHCT1G32GW Datenblatt(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 74AHC_AHCT1G32_7 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 07 — 14 May 2009 6 of 12 NXP Semiconductors 74AHC1G32; 74AHCT1G32 2-input OR gate [1] tpd is the same as tPLH and tPHL. [2] Typical values are measured at VCC = 3.3 V. [3] Typical values are measured at VCC = 5.0 V. [4] CPD is used to determine the dynamic power dissipation PD (µW). PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 12. Waveforms For type 74AHCT1G32 tpd propagation delay A and B to Y; see Figure 5; VCC = 4.5 V to 5.5 V [1] [3] CL = 15 pF - 3.3 6.9 1.0 8.0 1.0 9.0 ns CL = 50 pF - 4.8 7.9 1.0 9.0 1.0 10 ns CPD power dissipation capacitance per buffer; CL =50pF;f=1 MHz; VI = GND to VCC [4] -17 - - - - - pF Table 8. Dynamic characteristics …continued GND = 0 V; tr = tf = ≤ 3.0 ns. For waveform see Figure 5. For test circuit see Figure 6. Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max Measurement points are given in Table 9. Fig 5. The input (A and B) to output (Y) propagation delays mna167 A, B input Y output tPHL tPLH VM VM Table 9. Measurement points Type number Input Output VI VM VM 74AHC1G32 GND to VCC 0.5 × VCC 0.5 × VCC 74AHCT1G32 GND to 3.0 V 1.5 V 0.5 × V CC |
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