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STP10N65K3 Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STP10N65K3
Bauteilbeschribung  N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Electrical characteristics
STF10N65K3, STFI10N65K3, STP10N65K3
4/17
Doc ID 15732 Rev 3
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
VDS = 650 V, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 100 µA
3
4.5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 3.6 A
0.75
1
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
1180
125
14
-
pF
pF
pF
Coss eq.
Equivalent output
capacitance
VDS = 0 to 520 V, VGS = 0
-
77
-
pF
RG
Intrinsic gate resistnce f=1 MHz open drain
-
3
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 7.2 A,
VGS = 10 V
(see Figure 18)
-
42
7.4
23
-
nC
nC
nC


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