FQAF22P10 datasheet(3/8 Pages) FAIRCHILD

Teilenummer	FQAF22P10

Bauteilbeschribung	100V P-Channel MOSFET

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 8 page

Rev. B, August 2002

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

10

-1

10

0

10

1

25℃

175℃

※Notes :

1. V

GS

=0V

2. 250μ s Pulse Test

-V

SD , Source-Drain Voltage [V]

24

68

10

-1

10

0

10

1

※ Notes:

1. V

DS = -40V

2. 250μ s Pulse Test

-55℃

175℃

25℃

-V

GS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

V

GS

Top :

-15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.0 V

-5.5 V

-5.0 V

Bottom: -4.5 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

-V

DS, Drain-Source Voltage [V]

0

10

20304050607080

90

100

0.0

0.1

0.2

0.3

0.4

0.5

※ Note : T

J = 25

℃

V

GS = - 20V

V

GS = - 10V

-I

D

, Drain Current [A]

0

1020

3040

50

0

2

4

6

8

10

12

V

DS = -50V

V

DS = -20V

V

DS = -80V

※ Note : I

D = -22 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

3500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

-V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

Ähnliche Beschreibung - FQAF22P10

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