Datenblatt-Suchmaschine für elektronische Bauteile |
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FQAF33N10 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FQAF33N10 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2000 Fairchild Semiconductor International April 2000 Rev. A, April 2000 QFET QFET QFET QFETTM FQAF33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • 25.8A, 100V, RDS(on) = 0.052Ω @VGS = 10 V • Low gate charge ( typical 38 nC) • Low Crss ( typical 62 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQAF33N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 25.8 A - Continuous (TC = 100°C) 18.2 A IDM Drain Current - Pulsed (Note 1) 103.2 A VGSS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 430 mJ IAR Avalanche Current (Note 1) 25.8 A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 83 W - Derate above 25°C 0.55 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.80 °C W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-3PF FQAF Series G S D |
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