Datenblatt-Suchmaschine für elektronische Bauteile |
|
FQP18N50V2 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
|
FQP18N50V2 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page Rev. B, August 2002 ©2002 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.83mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 9 A -- 0.225 0.265 Ω gFS Forward Transconductance VDS = 40 V, ID = 9 A (Note 4) -- 16 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2530 3290 pF Coss Output Capacitance -- 300 390 pF Crss Reverse Transfer Capacitance -- 11 14.3 pF Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1.0 MHz -- 76 -- pF Coss eff. Effective Output Capacitance VDS = 0V to 400 V, VGS = 0 V -- 150 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250 V, ID = 18 A, RG = 25 Ω (Note 4, 5) -- 40 90 ns tr Turn-On Rise Time -- 150 310 ns td(off) Turn-Off Delay Time -- 95 200 ns tf Turn-Off Fall Time -- 110 230 ns Qg Total Gate Charge VDS = 400 V, ID = 18 A, VGS = 10 V (Note 4, 5) -- 42 55 nC Qgs Gate-Source Charge -- 12 -- nC Qgd Gate-Drain Charge -- 14 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 18 A, dIF / dt = 100 A/µs (Note 4) -- 420 -- ns Qrr Reverse Recovery Charge -- 5.4 -- µC |
Ähnliche Teilenummer - FQP18N50V2 |
|
Ähnliche Beschreibung - FQP18N50V2 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |