Datenblatt-Suchmaschine für elektronische Bauteile |
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FQP33N10 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FQP33N10 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2000 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, April 2000 Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.6mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD 33A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.11 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 16.5 A -- 0.040 0.052 Ω gFS Forward Transconductance VDS = 40 V, ID = 16.5 A -- 22 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1150 1500 pF Coss Output Capacitance -- 320 420 pF Crss Reverse Transfer Capacitance -- 62 80 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 33 A, RG = 25 Ω -- 15 40 ns tr Turn-On Rise Time -- 195 400 ns td(off) Turn-Off Delay Time -- 80 170 ns tf Turn-Off Fall Time -- 110 230 ns Qg Total Gate Charge VDS = 80 V, ID = 33 A, VGS = 10 V -- 38 51 nC Qgs Gate-Source Charge -- 7.5 -- nC Qgd Gate-Drain Charge -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 33 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 33 A, dIF / dt = 100 A/µs -- 80 -- ns Qrr Reverse Recovery Charge -- 0.22 -- µC |
Ähnliche Teilenummer - FQP33N10 |
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Ähnliche Beschreibung - FQP33N10 |
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