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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FQP3P20 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FQP3P20 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  ©2000 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, April 2000 Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 29mH, IAS = -2.8A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD -2.8A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -200 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.18 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- -1 µA VDS = -160 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.4 A -- 2.06 2.7 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.4 A -- 1.23 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 190 250 pF Coss Output Capacitance -- 45 60 pF Crss Reverse Transfer Capacitance -- 7.5 10 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -100 V, ID = -2.8 A, RG = 25 Ω -- 8.5 25 ns tr Turn-On Rise Time -- 35 80 ns td(off) Turn-Off Delay Time -- 12 35 ns tf Turn-Off Fall Time -- 25 60 ns Qg Total Gate Charge VDS = -160 V, ID = -2.8 A, VGS = -10 V -- 6.0 8.0 nC Qgs Gate-Source Charge -- 1.7 -- nC Qgd Gate-Drain Charge -- 2.9 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.8 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -11.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.8 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -2.8 A, dIF / dt = 100 A/µs -- 100 -- ns Qrr Reverse Recovery Charge -- 0.34 -- µC |
Ähnliche Teilenummer - FQP3P20 |
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Ähnliche Beschreibung - FQP3P20 |
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