Datenblatt-Suchmaschine für elektronische Bauteile |
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BTA40-400B Datenblatt(PDF) 2 Page - STMicroelectronics |
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BTA40-400B Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics BTA40, BTA41, BTB41 2/9 Doc ID 7469 Rev 8 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) TOP3 Tc = 95 °C 40 A RD91 / TOP ins. Tc = 80 °C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz t = 20 ms 400 A F = 60 Hz t = 16.7 ms 420 I²tI²t Value for fusing tp = 10 ms 1000 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125 °C 50 A/µs VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C VDSM/VRSM + 100 V IGM Peak gate current tp = 20 µs Tj = 125 °C 8 A PG(AV) Average gate power dissipation Tj = 125 °C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Parameter Value Unit IGT (1) VD = 12 V RL = 33 Ω I - II - III IV MAX. 50 100 mA VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125 °C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. 80 mA IL IG = 1.2 IGT I - III - IV MAX. 70 mA II 160 dV/dt(2) VD = 67% VDRM gate open Tj = 125 °C MIN. 500 V/µs (dV/dt)c(2) (dI/dt)c = 20 A/ms Tj = 125 °C MIN. 10 V/µs 1. Minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1 |
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