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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FQPF17P10 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FQPF17P10 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  ©2002 Fairchild Semiconductor Corporation QFETTM Rev. B, August 2002 FQPF17P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • -10.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 100 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQPF17P10 Units VDSS Drain-Source Voltage -100 V ID Drain Current - Continuous (TC = 25°C) -10.5 A - Continuous (TC = 100°C) -7.4 A IDM Drain Current - Pulsed (Note 1) -42 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 580 mJ IAR Avalanche Current (Note 1) -10.5 A EAR Repetitive Avalanche Energy (Note 1) 4.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns PD Power Dissipation (TC = 25°C) 41 W - Derate above 25°C 0.27 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 3.66 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W TO-220F FQPF Series G S D S D G |
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Ähnliche Beschreibung - FQPF17P10 |
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