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FQPF5N50CFTU Datenblatt(PDF) 3 Page - Fairchild Semiconductor

Teilenummer FQPF5N50CFTU
Bauteilbeschribung  Low gate charge ( typical 18nC)
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF5N50CFTU Datenblatt(HTML) 3 Page - Fairchild Semiconductor

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FQPF5N50CF Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2468
10
10
-1
10
0
10
1
150
°C
25
°C
-55
°C
Notes :
1. V
DS
= 40V
2. 250
µs Pulse Test
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom :
5.0 V
Notes :
1. 250
µs Pulse Test
2. T
C
= 25
°C
V
DS
, Drain-Source Voltage [V]
05
10
15
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
°C
I
D
, Drain Current [A]
0.20.4
0.60.8
1.0
1.2
1.4
10
-1
10
0
10
1
150?
Notes :
1. V
GS
= 0V
2. 250
µs Pulse Test
25?
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 5A
Q
G
, Total Gate Charge [nC]


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