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QXX16NH2 Datenblatt(PDF) 2 Page - Littelfuse

Teilenummer QXX16NH2
Bauteilbeschribung  15 Amp and 16 Amp bi-directional solid state switch series is designed for AC
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Hersteller  LITTELFUSE [Littelfuse]
Direct Link  http://www.littelfuse.com
Logo LITTELFUSE - Littelfuse

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108
Revised: November 1, 2010 05:04 PM
©2010 Littelfuse, Inc
Teccor® brand Thyristors
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
15 Amp Standard & 16 Amp Alternistor (High Commutation) Triacs
Qxx15xx & Qxx16xHx Series
Electrical Characteristics (T
J = 25°C, unless otherwise specified) — Standard Triac
Symbol
Test Conditions
Quadrant
Value
Unit
I
GT
V
D = 12V RL = 60 Ω
I – II – III
MAX.
50
mA
V
GT
I – II – III
MAX.
2.0
V
V
GD
V
D = VDRM RL = 3.3 kΩ TJ = 125°C
I – II – III
MIN.
0.2
V
I
H
I
T = 100mA
MAX.
70
mA
dv/dt
V
D = VDRM Gate Open TJ = 125°C
400V
MIN.
275
V/μs
600V
225
800V
200
V
D = VDRM Gate Open TJ = 100°C
1000V
200
(dv/dt)c
(di/dt)c = 8.1 A/ms T
J = 125°C
MIN.
4
V/μs
t
gt
I
G = 2 x IGT
PW = 15μs I
T = 22.6 A(pk)
TYP.
4
μs
Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Qxx16LHy
T
C = 80°C
16
A
Qxx16RHy
Qxx16NHy
T
C = 90°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J initial = 25°C)
f = 50 Hz
t = 20 ms
167
A
f = 60 Hz
t = 16.7 ms
200
I2t
I2t Value for fusing
t
p = 8.3 ms
166
A2s
di/dt
Critical rate of rise of on-state current
f = 120 Hz
T
J = 125°C
100
A/μs
I
GTM
Peak gate trigger current
t
p ≤ 10 μs;
I
GT ≤ IGTM
T
J = 125°C
2.0
A
P
G(AV)
Average gate power dissipation
T
J = 125°C
0.5
W
T
stg
Storage temperature range
-40 to 150
ºC
T
J
Operating junction temperature range
-40 to 125
ºC
Note: xx = voltage, y = sensitivity
Absolute Maximum Ratings — Standard Triac
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Qxx15Ly
T
C = 80°C
15
A
Qxx15Ry
Qxx15Ny
T
C = 90°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J initial = 25°C)
f = 50 Hz
t = 20 ms
167
A
f = 60 Hz
t = 16.7 ms
200
I2t
I2t Value for fusing
t
p = 8.3 ms
166
A2s
di/dt
Critical rate of rise of on-state current
f = 120 Hz
T
J = 125°C
100
A/μs
I
GTM
Peak gate trigger current
t
p ≤ 10 μs
I
GT ≤ IGTM
T
J = 125°C
2.0
A
P
G(AV)
Average gate power dissipation
T
J = 125°C
0.5
W
T
stg
Storage temperature range
-40 to 150
ºC
T
J
Operating junction temperature range
-40 to 125
ºC
Note: xx = voltage, y = sensitivity


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