Datenblatt-Suchmaschine für elektronische Bauteile |
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FFPF60SA60DS Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FFPF60SA60DS Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page Absolute Maximum Ratings (per leg) T C=25°C unless otherwise noted Thermal Characteristics Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 95 °C8 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 80 A PD Power Dissipation 26 W WAVL Avalanche Energy (1A, 40mH) 20 mJ TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Symbol Parameter Value Unit RθJC Maximum Thermal Resistance, Junction to Case 3.125 °C/W RθJA Maximum Thermal Resistance, Junction to Ambient 62.5 °C/W FFPF60SA60DS Features Applications • Switch Mode Power Supplies • Hard Swithed PFC Boost Diode • UPS Free wheeling Diode • Motor Drive FWD •SMPS FWD • Snubber Diode 1 2 3 TO-220F-3L 1 2 3 tm October 2004 6 A, 600 V, STEALTH™ Dual Diode The FFPF60SA60DS is STEALTH™ dual diode with soft recovery characteristics. It is silicon nitride passivated ion- implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Stealth Recovery trr = 39 ns (@ IF = 8 A) • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant www.fairchildsemi.com 1 ©200 4 Fairchild Semiconductor Corporation FFPF60SA60DS Rev. A |
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