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FFPF60SA60DS Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer FFPF60SA60DS
Bauteilbeschribung  6 A, 600 V, STEALTH Dual Diode
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FFPF60SA60DS Datenblatt(HTML) 1 Page - Fairchild Semiconductor

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Absolute Maximum Ratings (per leg) T
C=25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
@ TC = 95 °C8
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
80
A
PD
Power Dissipation
26
W
WAVL
Avalanche Energy (1A, 40mH)
20
mJ
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
°C
Symbol
Parameter
Value
Unit
RθJC
Maximum Thermal Resistance, Junction to Case
3.125
°C/W
RθJA
Maximum Thermal Resistance, Junction to Ambient
62.5
°C/W
FFPF60SA60DS
Features
Applications
• Switch Mode Power Supplies
• Hard Swithed PFC Boost Diode
• UPS Free wheeling Diode
• Motor Drive FWD
•SMPS FWD
• Snubber Diode
1
2
3
TO-220F-3L
1
2
3
tm
October 2004
6 A, 600 V, STEALTH™ Dual Diode
The FFPF60SA60DS is STEALTH™ dual diode with soft
recovery characteristics. It is silicon nitride passivated ion-
implanted epitaxial planar construction. This device is intended
for use as freewheeling of boost diode in switching power
supplies and other power swithching applications. Their low
stored charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits reducing power
loss in the switching transistors.
• Stealth Recovery trr = 39 ns (@ IF = 8 A)
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
www.fairchildsemi.com
1
©200
4 Fairchild Semiconductor Corporation
FFPF60SA60DS Rev. A


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