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BTA312-800C Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BTA312-800C Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 11 page NXP Semiconductors BTA312-800C 3Q Hi-Com Triac BTA312-800C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 4 October 2012 3 / 11 Symbol Parameter Conditions Min Max Unit I2t I2t for fusing tp = 10 ms; SIN - 50 A2s dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C 003aab686 0 5 10 15 -50 0 50 100 150 Tmb (°C) IT(RMS) (A) Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values 003aab687 0 10 20 30 40 50 10-2 10-1 1 10 s urge duration (s ) IT(RMS) (A) f = 50 Hz; Tmb = 100 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values 003aab690 0 4 8 12 16 0 3 6 9 12 IT(RMS) (A) Ptot (W) α = 180° 120° 90° 60° 30° conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α α = conduction angle Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values |
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