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BTA312-800C Datenblatt(PDF) 5 Page - NXP Semiconductors |
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BTA312-800C Datenblatt(HTML) 5 Page - NXP Semiconductors |
5 / 11 page NXP Semiconductors BTA312-800C 3Q Hi-Com Triac BTA312-800C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 4 October 2012 5 / 11 003aab775 10-1 10-2 1 10 Zth(j-mb) (K/W) 10-3 tp (s) 10-5 1 10 10-1 10-2 10-4 10-3 tp PD t (1) (2) (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 2 - 35 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 2 - 35 mA IGT gate trigger current VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 2 - 35 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 - - 50 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 - - 60 mA IL latching current VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 - - 50 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 35 mA VT on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 0.25 0.4 - V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 - 0.8 1.5 V ID off-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA |
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