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BTA312-800C Datenblatt(PDF) 1 Page - NXP Semiconductors

Teilenummer BTA312-800C
Bauteilbeschribung  3Q Hi-Com Triac
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

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BTA312-800C
3Q Hi-Com Triac
4 October 2012
Product data sheet
Scan or click this QR code to view the latest information for this product
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. This "series C" triac will commutate the full RMS current at the maximum rated
junction temperature without the aid of a snubber.
1.2 Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High voltage capability
Less sensitive gate for high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt
1.3 Applications
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDRM
repetitive peak off-
state voltage
-
-
800
V
ITSM
non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
-
-
100
A
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 100 °C; Fig. 1;
Fig. 2; Fig. 3
-
-
12
A
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
2
-
35
mA
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
2
-
35
mA


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