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BC546A Datenblatt(PDF) 7 Page - NXP Semiconductors |
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BC546A Datenblatt(HTML) 7 Page - NXP Semiconductors |
7 / 14 page BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 07 — 17 November 2009 7 of 14 NXP Semiconductors BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors VCE =5V (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C VCE =5V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C Fig 5. Selection B: DC current gain as a function of collector current; typical values Fig 6. Selection B: Base-emitter voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C IC/IB =10 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C Fig 7. Selection B: Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Selection B: Base-emitter saturation voltage as a function of collector current; typical values mgt727 10−1 110 102 103 IC (mA) 0 600 500 400 300 200 100 hFE (1) (2) (3) 0 1200 1000 800 600 400 200 mgt728 10−2 10−1 110 102 103 IC (mA) VBE (mV) (1) (2) (3) 104 103 102 10 mgt729 10−1 110 102 103 IC (mA) VCEsat (mV) (1) (2) (3) mgt730 10−1 110 102 103 IC (mA) 0 1200 1000 800 600 400 200 VBEsat (mV) (1) (2) (3) |
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Ähnliche Beschreibung - BC546A |
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