Datenblatt-Suchmaschine für elektronische Bauteile |
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HUFA75307T3ST Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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HUFA75307T3ST Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2001 Fairchild Semiconductor Corporation HUFA75307T3ST Rev. B HUFA75307T3ST 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307. Features •2.6A, 55V • Ultra Low On-Resistance, rDS(ON) = 0.090Ω • Diode Exhibits Both High Speed and Soft Recovery • Temperature Compensating PSPICE® Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging SOT-223 This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Ordering Information PART NUMBER PACKAGE BRAND HUFA75307T3ST SOT-223 5307 NOTE: HUFA75307T3ST is available only in tape and reel. D G S DRAIN SOURCE GATE DRAIN (FLANGE) Data Sheet December 2001 |
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