Datenblatt-Suchmaschine für elektronische Bauteile |
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HUFA75542S3S Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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HUFA75542S3S Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA75542P3, HUFA75542S3S Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 80 - - V Zero Gate Voltage Drain Current IDSS VDS = 75V, VGS = 0V - - 1 µA VDS = 70V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Drain to Source On Resistance rDS(ON) ID = 75A, VGS = 10V (Figure 9) - 0.012 0.014 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-220 and TO-263 - - 0.65 oC/W Thermal Resistance Junction to Ambient RθJA -- 62 oC/W SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 40V, ID = 75A VGS = 10V, RGS = 3.9Ω (Figures 18, 19) - - 195 ns Turn-On Delay Time td(ON) - 12.5 - ns Rise Time tr - 117 - ns Turn-Off Delay Time td(OFF) -50- ns Fall Time tf - 80 - ns Turn-Off Time tOFF - - 195 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 40V, ID = 75A, Ig(REF) = 1.0mA (Figures 13, 16, 17) - 150 180 nC Gate Charge at 10V Qg(10) VGS = 0V to 10V - 80 96 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 5.7 7 nC Gate to Source Gate Charge Qgs -15- nC Gate to Drain "Miller" Charge Qgd -33- nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 2750 - pF Output Capacitance COSS - 700 - pF Reverse Transfer Capacitance CRSS - 250 - pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 75A - - 1.25 V ISD = 37.5A - - 1.00 V Reverse Recovery Time trr ISD = 75A, dISD/dt = 100A/µs - - 102 ns Reverse Recovered Charge QRR ISD = 75A, dISD/dt = 100A/µs - - 255 nC HUFA75542P3, HUFA75542S3S |
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