HUFA75652G3 datasheet(2/10 Pages) FAIRCHILD

Teilenummer	HUFA75652G3

Bauteilbeschribung	75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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2 / 10 page

HUFA75652G3 Rev. B

Electrical Specifications

TC = 25

oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

100

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 95V, VGS = 0V

-

1

µA

VDS = 90V, VGS = 0V, TC = 150

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

-

±100

nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

2

-

4

V

Drain to Source On Resistance

rDS(ON)

ID = 75A, VGS = 10V (Figures 9)

-

0.0067

0.008

Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case

RθJC

TO-247

-

0.29

oC/W

Thermal Resistance Junction to

Ambient

RθJA

--

30

oC/W

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

VDD = 50V, ID = 75A, VGS = 10V, RGS = 2.0Ω

-

320

ns

Turn-On Delay Time

td(ON)

-

18.5

-

ns

Rise Time

tr

-

195

-

ns

Turn-Off Delay Time

td(OFF)

-80-

ns

Fall Time

tf

-

190

-

ns

Turn-Off Time

tOFF

-

410

ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 50V,

ID = 75A,

Ig(REF) = 1.0mA

(Figure 13)

-

393

475

nC

Gate Charge at 10V

Qg(10)

VGS = 0V to 10V

-

211

255

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

-

14

16.5

nC

Gate to Source Gate Charge

Qgs

-26-

nC

Gate to Drain “Miller” Charge

Qgd

-74-

nC

CAPACITANCE SPECIFICATIONS

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

(Figure 12)

-

7585

-

pF

Output Capacitance

COSS

-

2345

-

pF

Reverse Transfer Capacitance

CRSS

-

630

-

pF

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 75A

-

1.25

V

ISD = 35A

-

1.00

V

Reverse Recovery Time

trr

ISD = 75A, dISD/dt = 100A/µs

-

150

ns

Reverse Recovered Charge

QRR

ISD = 75A, dISD/dt = 100A/µs

-

490

nC

HUFA75652G3

Ähnliche Beschreibung - HUFA75652G3

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Intersil Corporation	HUF75652G3	344Kb / 9P	75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
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	HUFA75344G3	336Kb / 10P	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
Intersil Corporation	RFG75N05E	53Kb / 6P	75A, 50V, 0.008 Ohm, N-Channel Power MOSFET
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Fairchild Semiconductor	HUF75645P3	204Kb / 10P	75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs

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