Datenblatt-Suchmaschine für elektronische Bauteile |
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HUFA76413DK8T Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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HUFA76413DK8T Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 11 page ©2003 Fairchild Semiconductor Corporation January 2003 Rev. B HUFA76413DK8T N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.8A, 56m Ω General Description These N-Channel power MOSFETs are manufactured us- ing the innovative UltraFET® process. This advanced pro- cess technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding perfor- mance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low re- verse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Applications • Motor and Load Control • Powertrain Management Features • 150°C Maximum Junction Temperature • UIS Capability (Single Pulse and Repetitive Pulse) • Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V • Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±16 V ID Drain Current 5.1 A Continuous (TC = 25 oC, V GS = 10V) Continuous (TC = 25 oC, V GS = 5V) 4.8 A Continuous (TC = 125 oC, V GS = 5V, R θJA = 228 oC/W) 1 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 260 mJ PD Power dissipation 2.5 W Derate above 25oC0.02 W/oC TJ, TSTG Operating and Storage Temperature -55 to 150 oC RθJA Thermal Resistance Junction to Ambient SO-8 (Note 2) 50 oC/W RθJA Thermal Resistance Junction to Ambient SO-8 (Note 3) 191 oC/W RθJA Thermal Resistance Junction to Ambient SO-8 (Note 4) 228 oC/W G1 (2) D1 (8) S1 (1) D1 (7) D2 (6) D2 (5) S2 (3) G2 (4) SO-8 1 |
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