HUFA76423D3 datasheet(1/10 Pages) FAIRCHILD

Teilenummer	HUFA76423D3

Bauteilbeschribung	20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

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HUFA76423D3, HUFA76423D3S Rev. B

HUFA76423D3, HUFA76423D3S

20A, 60V, 0.037 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFETs

Packaging

Symbol

Features

• Ultra Low On-Resistance

-rDS(ON) = 0.032Ω, VGS = 10V

-rDS(ON) = 0.037Ω, VGS = 5V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs RGS Curves

Ordering Information

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Specified

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN

(FLANGE)

DRAIN

SOURCE

HUFA76423D3

GATE

HUFA76423D3S

GATE

SOURCE

DRAIN

(FLANGE)

D

G

S

PART NUMBER

PACKAGE

BRAND

HUFA76423D3

TO-251AA

76423D

HUFA76423D3S

TO-252AA

76423D

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUFA76423D3ST.

HUFA76423D3,

HUFA76423D3S

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

60

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

60

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±16

V

Drain Current

Continuous (TC = 25

oC, V

GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 25

oC, V

GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100

oC, V

GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100

oC, V

GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

20

Figure 4

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

85

0.567

W

W/oC

Operating and StorageTemperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

NOTES:

1. TJ = 25

oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet

December 2001

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Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Fairchild Semiconductor	HUF76423D3	199Kb / 10P	20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchild
Intersil Corporation	HUF76423D3	127Kb / 9P	20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUFA76419D3	197Kb / 10P	20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
	HUFA76429D3	229Kb / 10P	20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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Intersil Corporation	HUF76419D3	332Kb / 9P	20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76419D3	197Kb / 10P	20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76429D3	200Kb / 10P	20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76413D3	105Kb / 9P	20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

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