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N0604N-S19-AY Datenblatt(PDF) 4 Page - Renesas Technology Corp

Teilenummer N0604N-S19-AY
Bauteilbeschribung  N-channel MOSFET Low on-state resistance
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

N0604N-S19-AY Datenblatt(HTML) 4 Page - Renesas Technology Corp

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N0604N
Chapter Title
R07DS0850EJ0100 Rev.1.00
Page 4 of 6
Aug 27, 2012
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
100
200
300
012
345
VGS = 10 V
Pulsed
VDS - Drain to Source Voltage - V
0.001
0.01
0.1
1
10
100
012
3456
Pulsed
VDS = 10 V
TA = 125 °C
75 °C
25 °C
–25 °C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
1
2
3
4
-50
0
50
100
150
VDS = 10 V
ID = 1.0 mA
Tch - Channel Temperature - °C
1
10
100
0.1
1
10
100
Pulsed
VDS = 5 V
TA = 125°C
75°C
25°C
–25°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
2
4
6
8
10
12
14
1
10
100
1000
Pulsed
VGS = 10 V
ID - Drain Current - A
0
5
10
15
20
0
5
10
15
20
Pulsed
ID = 41 A
VGS - Gate to Source Voltage - V


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